Cadmium Telluride and Zink-Cadmium Telluride

Cadmium Telluride (CdTe) and Zink-Cadmium Telluride (CdZnTe) are wide-band semiconductor materials of 26 group. Single crystals of these compounds are used for manufacturing detectors of ionizing radiation more effective than Ge and Si ones, and in infrared optics and laser technology. The main advantage of Zink-Cadmium Telluride crystals is ability to work at room temperature, while germanium-based detectors have to be cooled by liquid nitrogen. Besides that, the germanium-based detectors are used with spectrometers made of smaller cadmium telluride crystals. Zink-Cadmium Telluride crystals are currently used in solar energetic for photo-electric converters as the absorbing layers.

The modern methods of Zink-Cadmium Telluride crystal growth include:

- zone melting;

- Bridgeman method at high and low inert gas pressure;

- from the vapor phase.

The first two methods give the small size crystals of heterogeneous crystal structure. RusGems owns technology of larger size Cadmium Telluride and Zink-Cadmium Telluride crystal growth

that can be used for making crystals 4*4*2 sm, which is significantly higher than regular commercial crystal size 2*2*2 sm. 4*4*6 is considered to be the unique lab achievement. Our crystal structure is close to perfect (our technology guarantees Nd dislocation density of no more than 1*104 sm-2) and have significant benefits over other similar materials.